Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• structural, optical, and electrical properties of glancing angle-deposited NS-WOx thin films, where NS-WOx films of different thicknesses (6–60 nm) are prepared by rf sputtering and exposed to post-growth annealing at 673 K in vacuum (2 × 10−7 mbar). The role of increased oxygen vacancy concentration (OV) on

• on the variation in work function with thickness for GLAD-grown WOx films in this study is valuable towards potential device applications, where work function optimization among consecutive layers is imperative. Moreover, the adopted rf sputtering technique in the present work ensures reduced surface

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• , nanotubes or nanowires from the gas phase under vacuum or argon atmosphere. On the other hand, nanostructuring can be performed mechanically as indicated by the possibility of growth of nanocrystalline gas sensors via rf sputtering (13.6 MHz) of Te in an ultra-high-purity argon atmosphere [24]. The main

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• × 10−3 Ω−1). These highly conductive and transparent ITO films with Al–Ag interlayer can be a promising contact for low-resistance optoelectronics devices. Keywords: annealing; DC sputtering; figure of merit; indium tin oxide (ITO); multilayer structure; RF sputtering; Introduction Transparent

• diameter was used for the thin films preparation. The top and bottom ITO layers were deposited using RF sputtering while DC sputtering was applied for the deposition of the Al–Ag bilayer. Prior to deposition, Si substrates were heated in acetone at 55 °C for 5 min, rinsed in isopropanol and deionized water

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• chemical vapor deposition polymerization of parylene C combined with RF-sputtering of silver. It was demonstrated that the plasma itself induces changes in the density and semi-crystalline character of parylene C. A decrease in the density, an increase in the degree of crystallinity and an increase of

• temperature between 600 and 700 °C. Finally, the monomer molecules in the gaseous state enter the deposition zone to get deposited on substrates. When the RF sputtering process is enabled (open shutter), the silver atoms condense onto the substrates together with the monomer molecules and are then

• plasma-combined CVD process incorporating silver-oxide nanoparticles. Accuracy in the gain due to geometric dimensions of samples is in the range ±0.1 (sample F) to ±0.18 (sample C). Depostion of nanocomposite–parylene C (NCPC) by a combined CVD and RF sputtering technique. Experimental parameters of

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• prototypical in-plane EB layer system Ir17Mn83 (30 nm)/Co70Fe30 (10 nm) was grown by RF sputtering at a power of 160 W and an argon gas flux of 155 sccm on a naturally oxidized 5 nm × 5 nm Si(100) wafer, with Cu (5 nm) buffer and Ta (10 nm) capping. EB at the interface between the antiferromagnetic (AF) and

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• are based on p-doped Si wafers with a specific resistivity of 10 Ω cm. The buried SiO2 layer was grown via thermal oxidation at 1123 K in dry O2 atmosphere in a furnace followed by RF-sputtering of an amorphous Si layer. The thickness of the oxide layer was measured by spectroscopic ellipsometry in

High photocatalytic activity of Fe₂O₃/TiO₂ nanocomposites prepared by photodeposition for degradation of 2,4-dichlorophenoxyacetic acid

• Shu Chin Lee,
• Hendrik O. Lintang and
• Leny Yuliati

Beilstein J. Nanotechnol. 2017, 8, 915–926, doi:10.3762/bjnano.8.93

• ], plasma enhanced-chemical vapor deposition (PE-CVD) and radio frequency (RF) sputtering approach [12], and plasma enhanced-chemical vapor deposition and atomic layer deposition (ALD) followed by thermal treatment [13]. Among these preparation methods, impregnation is a commonly used approach for the

Sb₂S₃ grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

• Erki Kärber,
• Atanas Katerski,
• Ilona Oja Acik,
• Arvo Mere,
• Valdek Mikli and
• Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

• 1.7 eV prepared by RF sputtering [45]. The absorption coefficients of the layers grown with more than three cycles are likely to be overestimated (Figure 4A) due to the similar thickness of 100 nm assumed for all layers of Sb2S3 nanoparticles. Thus, a correction for the effective layer thicknesses was

• Sb2S3 by RF sputtering from a preformed high-purity Sb2S3 target, in vacuum environment, and with a post-deposition annealing at 400 °C under sulfur vapor to obtain crystalline, dense, smooth and stoichiometric Sb2S3 films [45]. For ALD, the growth rate of Sb2S3 film has been reported to be 0.002 nm·s−1

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• high quality of the materials deposited by RF-sputtering for this experiment. The results of response time measurements show that photodetector structure as realized here is much quicker than Ge–graphene based photodetectors (tr ≈ 23 µs and tf ≈ 108 µs) [48], MoS2-based photodetectors (tr ≈ 3 µs and tf

Pt- and Pd-decorated MWCNTs for vapour and gas detection at room temperature

• Hamdi Baccar,
• Atef Thamri,
• Pierrick Clément,
• Eduard Llobet and
• Adnane Abdelghani

Beilstein J. Nanotechnol. 2015, 6, 919–927, doi:10.3762/bjnano.6.95

• evaporation onto carbon nanotubes and this sensor was also somewhat responsive to aromatic VOCs. Conclusion In this paper, we have reported on the gas sensing properties of carbon nanotubes decorated with Pt or Pd nanoparticles. Nanoparticles were formed by rf sputtering, which allowed an oxygen plasma

• possible to determine the presence of aromatic VOCs in a background in which the presence of non-aromatic VOCs is likely to occur. TEM images of the Pd-decorated MWCNTs (a) and Pt-decorated MWCNTs (b) resulting from the rf sputtering treatment. High-resolution XPS spectra in the C 1s and Pd 3d regions of a

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

• Omar F. Farhat,
• Mohd M. Halim,
• Mat J. Abdullah,
• Mohammed K. M. Ali and
• Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

• cleaned following the procedures reported elsewhere [15]. All chemicals were of analytical grade and were used as obtained from Aldrich without further purification. Briefly, the substrates were coated with 130 nm of ZnO seed layers using RF sputtering and annealed at 200 °C for 1 h. In a typical

Integration of ZnO and CuO nanowires into a thermoelectric module

• Dario Zappa,
• Simone Dalola,
• Guido Faglia,
• Elisabetta Comini,
• Matteo Ferroni,
• Caterina Soldano,
• Vittorio Ferrari and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2014, 5, 927–936, doi:10.3762/bjnano.5.106

• at 30 min [23]. Copper oxide is a p-type semiconductor with a narrow band-gap of 1.2 eV with monoclinic crystal structure [38]. In the present work, copper oxide nanowires have been grown by thermal oxidation of metallic Cu thin-film layer, previously deposited by RF sputtering on 20 mm × 20 mm

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• ]. In this study, radio frequency (RF) sputtering was used to deposit Al2O3 nanoparticles on an alumina substrate. In the case of conventional RF sputtering, the migration length of the Al2O3 nanoparticles on the substrate surface depends on the Schwöbel barrier [48] in the free energy profile. The

• nm. In order to confirm the selective desorption of nanoparticles at the ridge edges, the DPP method was applied to a sapphire substrate with a uniform step-and-terrace structure [51]. Figure 5c and Figure 5d show AFM images after RF sputtering (sputtering time of 30 s), without and with visible

• Figure 5c and Figure 5e, respectively. These images confirm the selective deposition at the terrace edges during conventional RF sputtering. Furthermore, as a further confirmation that DPP desorption prevented the growth of Al2O3 nanoparticles on the terrace edges, no clear Al2O3 nanoparticle growth

Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

• Adib Abou Chaaya,
• Roman Viter,
• Mikhael Bechelany,
• Zanda Alute,
• Donats Erts,
• Anastasiya Zalesskaya,
• Kristaps Kovalevskis,
• Vincent Rouessac,
• Valentyn Smyntyna and
• Philippe Miele

Beilstein J. Nanotechnol. 2013, 4, 690–698, doi:10.3762/bjnano.4.78

• different deposition techniques such as sol–gel [18], chemical vapor deposition [19], electro-deposition [5][6][7], RF sputtering, and atomic layer deposition (ALD) [16][17]. It is well known that the optoelectronic properties of zinc oxide thin film [20][21] are strongly dependent on the structure [11][22